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Предложение о партнерстве для совместного участия в 7РП

Институт физики полупроводников имени В. Е. Лашкарева НАН Украины - ICT-2009.3.1 Nanoelectronics technjlogy; ICT-2009.3.7 Photonics

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Дата заполнения 09.10.2009
Название организации Институт физики полупроводников имени В. Е. Лашкарева НАН Украины
Адрес организации Украина, 03028, Киев, пр. Науки, 41
Подразделение/отдел Отдел световых полупроводников
Контактное лицо Пильнов Геннадий Борисович – представитель Института физики полупроводников в проекте ИСТОК-СОЮЗ (http://www.istok-soyuz.eu/index.php/call-for-proposals)
Телефон +7-48439-95856
Факс +7-48439-68492
E-Mail g.pilnov@rttn.ru
Сайт http://web.isp.kiev.ua/index.php?lang=en
Тип организации
  • Научно-исследовательская
  • Образовательная
Специальная программа
Тематическое направление
Информационные и коммуникационные технологии (ICT)
Идентификационный номер конкурса
Номер(а) тем(ы) и название ICT-2009.3.1 Nanoelectronics technjlogy; ICT-2009.3.7 Photonics
Крайний срок подачи заявок 26.10.2009
Краткое описание Вашей организации V. Lashkaryov Institute of Semiconductor Physics of NAS of Ukraine was founded in 1960 and became the leading institution of semiconductor technologies and devices in Ukraine. The main scientific directions of the Institute activity are as follows: physics of interaction of electromagnetic radiation with matter; physics of low-dimensional systems, micro- and nanoelectronics; optoelectronics and solar energetics; semiconductor materials science and sensor systems. In recent years, the Institute activity is characterized by the priority development of the the following fundamental and applied investigations and elaborations: theoretical and experimental investigations of self organization process and physics of semiconductor nanostructures; works on physical, physico-chemical and technological problems for creation of the element basis for optoelectronics, facilities for information processing, new type sources of radiation; investigations in the field of optics of solids, in particular, search of new phenomena, non-linear optical materials, optical methods of qualitative and quantitative non-destructive testing them, quantum electronics and physics of solid-state lasers etc.
Краткое описание предложения о партнерстве Team is interesting in integration into existent consortia
Team’s Expertise: The development of two-dimensional photonic macroporous silicon structures with nanocoatings for thermo- and photodetector, light emitters and waveguides fabrication
Type Details: Team's R&D ICT activity in Nanoelectronics Technology is directed to the development of two-dimensional photonic macroporous silicon structures with nanocoatings for thermo- and photodetector fabrication. Silicon is perspective materials for the development of two-dimensional photonic crystals with necessary geometry due to the crystal anisotropy permitting a cheap and effective electrochemical process. We improved the manufacturing technology of two-dimensional silicon photonic structures with 0.5-10 micron rod diameters using a stable regime of the photoelectrochemical etching and submicron technologies. The developed method is capable to electrochemically tune the pore diameters and to chemically modify the surface. The pores are located with strong periodicity. We synthesized on the pore walls nanocoatings SiO2 and SiC (100 nm thickness), CdTe, CdS and ZnO (40 nm thickness) and developed uncooled photodetectors for the 0.5-4 micron wave range.
Team's R&D ICT activity in Photonics is directed to the development of the active and passive elements of the integrated nanophotonic circuits (light emitters, waveguides). Measured powerfull absorption bands in the visible and infrared spectrum ranges as well as nanocoatings expand the photonic crystal functionality as light emitters and waveguides. The pronounced peak registration in photoresponse spectra of "In-macroporous Si" structures at the wavelengths 0.5-5 micron, low level of noise confirmed the possibility of the effective photoelectrical waveguide manufacture using photonic macroporous silicon structures. In view of the integrated nanophotonic circuit application based on two-dimensional photonic crystals, medical and environmental monitoring the following developments are being finalized now: light emitters for 0.65-0.75 micron operational range.
Additional information:
Ключевые слова Macroporous silicon structures nanocoatings thermodetectors photodetectors light emitters and waveguides
Публикации по теме
  • L.A.Karachevtseva, N.I. Karas’, V.F.Onischenko, F.F.Sizov. Surface polaritons in 2D macroporous silicon structures // Int. J. Nanotechnology, 3(1), 76-88.(2006).
  • A. Glushko and L. Karachevtseva. Photonic band structure in oxidized macroporous silicon // Opto-Electronics Review, 14 (3) 291-293 (2006).
  • A. Glushko and L. Karachevtseva. PBG properties of three-component 2D photonic crystals // Photonics and Nanostructures, 4, 141-145 (2006).
  • E. B. Kaganovich, D. V. Korbutyak, Yu. V. Kryuchenko, I. M. Kupchak, E. G. Manoilov and A. V. Sachenko. Exciton states and photoluminescence in Ge quantum dots // Nanotechnology, 18, 295401-295405 (2007).
  • L.A. Karachevtseva, V.I. Ivanov, O.O. Lytvynenko, K.A. Parshin, O.J. Stronska. The impurity Franz-Keldysh effect in 2D photonic macroporous silicon structures // Applied Surface Science, 255(5), 3328-3331 (2008).
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