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Voronezh State Technical University - NMP-FP7-2010-4.0-2 Capacity building for the development of nanotech-based multiparameter sensors

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Date of filling in 24.08.2009
Organization name Voronezh State Technical University
Organization adress Russia, 394026, Voronezh, Moscow av., 14
Department/Unit Chair of of Semiconductor Electronics and Nanoelectronics
Contact person Stanislav I. Rembeza, Head of Semiconductor Electronics and Nanoelectronics Chair, Dr. Sc., Professor
Phone +7-4732-437695
Fax +7-4732-463277
E-Mail vstu-ppe@mail.ru
Web-site http://portal.vorstu.ru
Organization type
  • Research
  • Education
Special Programme
Nanosciences, nanotechnologies, materials and new production technologies (NMP)
Call identifier
Topic number NMP-FP7-2010-4.0-2 Capacity building for the development of nanotech-based multiparameter sensors
Call Deadline 08.12.2009
Short description of the organization (max 12 lines): Voronezh State Technical University was found 51 years ago and has 7 faculties prepared specialists for different industry branches (aircraft, radio-technical, mechanical engineering etc.). The Technical University has a many-years collaboration with enterprises and scientific research institutes. Department of Semiconductor Electronics and Microelectronics exists 47 years at Physical-Technical faculty and prepares engineers for microelectronic industry. Research groups of the department have a possibility to introduce their elaborations in design and fabrication of integrate circuits and original semiconductor devices into industry production. The research team of 3 Dr.Sci., 7 PhD, 8 engineers, post-graduate students and masters, has 12 years experience of work in the field of sensors fabrication and investigation. It has 6 Patents of Russian Federation to design, microelectronic technology of fabrication and composition of sensitive layers for toxic and explosive gases sensors. The research team has more than 100 publications on the topic in Russian and international journals and in proceedings of international conferences. The experimental sensors for control of CO, CH4 and other hydrocarbons have already been elaborated and tested.
Expertise offered Research team posses of AC- and DC-magnetron sputtering of metal and ceramic targets in the ambient of Ar+О2, investigation techniques for analysis of atomic composition, structure, morphology and electrical-physical parameters of the samples, can design and fabricate different integrated test structures and sensors by modern microelectronic technology (photolithography, multilayer metallization, ultrasonic binding etc.)
Scientific keywords Synthesis of sensitive layers Electrical-physical, structure properties Gas sensitive properties Sensor's design Sensor's fabrication technology
Publications on the topic (other references)
  • E.S.Rembeza, S.I.Rembeza, T.V.Svistova “Electrophysical properties of gas sensitive films SnO2 doped with palladium” - Sensors & Transducers Magazine, v.40, N 2, p. 145-151, 2004.
  • S.I.Rembeza, T.V.Svistova, E.S.Rembeza, V.V.Milashechko "Influence of platinum dopants on the properties of SnO2 films for gas sensors” – Microsystems, v.3, p.21-24, 2004.
  • S.I.Rembeza, T.V.Svistova, E.S.Rembeza, G.V.Gorlova “Electrical and optical properties of semiconductor films on the base of SnO2” – Electrical Engineering, v. 10, p. 10-14, 2004.
  • E.S.Rembeza, S.I.Rembeza, E.P.Domashevskaya, M.V.Grechkina, B.L.Agapov "Influence of the atomic composition of oxide nanocomposites on the base of SnO2 on their structure” – Nano- and Microsystems, v.7, p. 25-28, 2005.
  • I.A.Popova, A.P.Pavin, E.S.Rembeza, E.P.Domashevskaya “Fractal analysis of disordered nanocrystalline tin dioxide films” - Proceedings of Russian Academy of Science, ser. "Physics", v.69, N8, p. 1210-1213, 2005.
  • E.S.Rembeza, S.I.Rembeza, T.V.Svistova, O.I.Borsyakova “Physical properties of SnO2 films subjected to incoherent pulsed radiation” – Semiconductors, v.40, N 1, p. 55-58, 2006.
  • E.S.Rembeza, S.I.Rembeza, T.V.Svistova, N.N.Dyrda "Methods of enhancement gas sensitive properties of SnO2 films for gas sensors" - Proceedings Universities of Russia, ser. "Electronics", N1, p.3-8, 2006.
  • E.S.Rembeza, T.V.Svistova, S.I.Rembeza, A.S.Komarova, N.N.Dyrda "Structure and electrical-physical properties of SnOx:MnOy nanocomposite” – Nano- and Microsystems, v.4, p. 27-28, 2006.
  • V.I.Mitrokhin, S.I.Rembeza, E.S.Rembeza, A.A.Rudenko “Inelastic relaxation in tin dioxide thin films” – Solid State Phenomena, v. 115, p. 275-278, 2006.
  • E.S.Rembeza, T.V.Svistova, S.I.Rembeza, A.S.Komarova, N.N.Dyrda "Nanocomposites SnOx:MnOy for microelectronic gas sensors” – Nano- and Microsystems, v.11, p. 23-25, 2006.
  • E.S.Rembeza, S.I.Rembeza, B.M.Sinelnikov, T.V.Svistova, E.P.Domashevskaya “Thin film nanocomposites for gas sensors” - Journal of the Rare Metal Materials and Engineering, v.35, suppl. 3, p. 33-35, 2006.
  • E.S.Rembeza, S.I.Rembeza “Nanocomposites Sn-Si-O and Sn-Mn-O for gas sensors“ - Sensors & Transducers Journal, v.85, N11, p. 1739-1744, 2007.
  • E.S.Rembeza, S.I.Rembeza, E.A.Tarasova, M.V.Grechkina "Structure and electrical-physical properties of nanocomposite Sn-Y-O” – Nano- and Microsystems, v.6, p. 19-22, 2008.
  • S.I.Rembeza, T.V.Svistova, E.S.Rembeza, G.V.Gorlova "Semiconductor metal oxide gas sensor” - Patent of Russian Federation N 2206082 of 10.06.2003.
  • S.I.Rembeza, V.A.Buslov, O.G.Vikin, E.S.Rembeza, G.A.Vikin “Solid integral gas sensor” - Patent of Russian Federation N 2257567 of 19.05.2005.
  • S.I.Rembeza, T.V.Svistova, E.S.Rembeza, N.N.Dyrda “Method of fabrication of sensitive element for gas sensors” - Patent of Russian Federation N 2307346 of 27.09.97.
Description of previous and present experience in International Cooperation 2008-2009 joint Russian-Chinese project (RFBR-GFEN grant 07-02-92102 «Fabrication and Surface/Interface Structure-Gas Sensing Property Relationship of SnO2- based Nanocomposite Thin Films»
Previous participation in EU’s Framework Programme projects