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Voronezh State University - Investigations of nanosized metal – wide gap semiconductor heterostructures

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Date of filling in 26.11.2007
Organization name Voronezh State University
Organization adress Universitetskaya pl., 1, Voronezh, 304006, Russia
Department/Unit Solid State Physics and Nanostructures Department, Physics Faculty
Contact person Yurakov Yury, DSc, Professor
Phone +7-4732-208363
Fax +7-4732-208363
E-Mail ftt@phys.vsu.ru
Web-site http://www.vsu.ru
Organization type
  • Research
  • Education
Special Programme
Nanosciences, nanotechnologies, materials and new production technologies (NMP)
Call identifier
Topic number Investigations of nanosized metal – wide gap semiconductor heterostructures
Call Deadline -
Short description of the organization (max 12 lines): -
Expertise offered The aim of the project – determination of the formation process regularities for nanosized heterostructures on the surfaces of the wide-gap oxide semiconductors. Investigations of the different physical-chemical factors influence on phase composition, substructure, optical properties and electron structure is proposed. Investigation will be conducted with the use of synchrotron radiation too. Main parts of the project consist in investigations of the structure and phase composition, optical properties, electron-energy structure, electronic transport mechanisms in these heterostructures. Also the influence of the semiconductor-metal physical-chemical interaction on the electrophysical properties of the system will be investigated. As the investigated objects the doped and non doped nanolayers of the semiconducting metal oxides (such as tin oxides) are proposed. Technological peculiarity of the metal nano islands producing from the half-solid layer is cyclical processing of the system by H2-O2, CO-O2 gases. As the result of the reversible physical-chemical interaction (sorbtion) of the different by their properties gases with metallic layer the fragmentation of this layer with the islands isolated from each other formation is occurred. This phenomenon will be used for the first time for the producing of the island structures for revealing of the sensor nanostructures with optimal gas sensing properties. The use of synchrotron radiation sources (such as BESSY II, Berlin, Germany and SRC, Madison, USA) regularly used by project author since 2003 is first of all caused by high radiation intensity and cutting edge analytical equipment that will allow to get most accurate, precise and reliable data. Problems to be solved and results:
Expected results: - Technological terms and conditions for nanosized metal-semiconductor heterostructures manufacturing with specified morphology. Specified correlations between structure characteristics and electrophysical properties of the investigated nanostructures. - New data about phase formation and substructure regularities in dependence on technological formation regimes (partially with the use of synchrotron radiation). - New data about optical and electrophysical properties of the nanosized metal – wide gap semiconductor heterostructures. - New data about electron-energy structure and properties of the investigated objects obtained with the use of synchrotron investigation methods. - Electronic transport mechanisms in the investigated heterostructures and influence of the physical-chemical semiconductor-metal interaction on systems electrophysical properties. - Development of the sensor nanostructure creation technology for producing heterostructures with optimal gas sensing properties.
Scientific keywords nanosized structures, self-assembly, nanolayers, phase composition, substructure electron structure
Publications on the topic (other references) 1. Oxides formation in tin nanolayers / Yu. A. Yurakov, S. V. Ryabtsev, O. A. Chuvenkova E. P. Domashevskaya, V.M. Kashkarov, S. Yu. Turishchev, S. B. Kushev, S.V. Kannykin // Condensed matter and interface boundaries (Condensirovanniye sredy i mezhfazniye granitsy). – 2004. – V.6, N4. – P. 415 – 421. 2. Optical properties of SnO2−x nanolayers / E. P. Domashevskaya, S. V. Ryabtsev, E. A. Tutov, Yu. A. Yurakov, O. A. Chuvenkova and A. N. Lukin // Technical Physics Letters. – 2006. – V.32, N9. – P. 782-784. 3. TEM and XANES investigations and optical properties of SnO nanolayers / E.P. Domashevskaya, O.A. Chuvenkova, V.M. Kashkarov, S.B. Kushev, S.V. Ryabtsev, S.Yu. Turishchev, Yu.A. Yurakov // Surface and Interface Analysis. – 2006. – 38, – P. 514 – 517. 4. Synchrotron investigations of the initial stage of tin nanolayers oxidation / E.P. Domashevskaya, Yu.A. Yurakov, S.V. Ryabtsev, O.A. Chuvenkova, V.M. Kashkarov, S.Yu. Turishchev // Journal of Electron Spectroscopy and Related Phenomena. – 2007. – 156 – 158, – P. 340 – 343. 5. SnOx obtaining by thermal oxidation of nanoscale tin films in the air and its characterization / E.P. Domashevskaya, S.V. Ryabtsev, Yu.A. Yurakov, O.A. Chuvenkova, V.M. Kashkarov, S.Yu. Turishchev, S.B. Kushev, A.N. Lukin // Thin Solid Films – 2007. – 515, – P. 6350 – 6355.
Description of previous and present experience in International Cooperation -
Previous participation in EU’s Framework Programme projects