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Voronezh State University -

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Date of filling in 27.11.2007
Organization name Voronezh State University
Organization adress Universitetskaya pl., 1, Voronezh, 304006, Russia
Department/Unit Chair of solid state physics and nanostructures
Contact person Turishchev Sergey, PhD
Phone +7-4732-208363; 406653
Fax +7-4732-208363
E-Mail ftt@phys.vsu.ru
Web-site http://www.vsu.ru
Organization type
  • Research
  • Education
Special Programme
Theme
Nanosciences, nanotechnologies, materials and new production technologies (NMP)
Call identifier
Topic number
Call Deadline -
Short description of the organization (max 12 lines): -
Expertise offered Silicon nanostructures are attracting interest for a variety of reasons. Silicon is a main material for microelectronics and nanotechnology. On the other hand the downsizing of units is the main trend in modern electronics and microelectronics, which inevitably leads into the world of nanoelectronics. Silicon nanocrystals can emit visible light, and it allows the creation of microchip elements that can be used for optical and electrical data processing. Perspective materials containing nanosized structures are rather complicate objects for investigations. Its structure and properties are in a strong dependence on the production technology. That’s why the investigations of the electron structure in dependence on the production technology conditions and obtained dimensional parameters using the nondestructive methods which allows obtaining the direct data of the interaction between local atomic structure and electron energy spectrum are in a great interest. In this project these methods are ultrasoft X-ray spectroscopy and photoelectron spectroscopy. The task of the project – obtaining experimental data on the electron structure of the nanosized and thin layer structures based on silicon and its compounds in dependence on the production technology. The aim of the project – determination of the production technology peculiarities influence on the electron structure, size effects and properties of the investigated structures. In framework on national level collaboration the technological and analytical equipment of the major Russian scientific centers such as Physics research institute (Nizhny Novgorod), Semiconductor physics institute (Novosibirsk), Voronezh, Novosibirsk and Nizhny Novgorod State Universities could be used. The use of synchrotron radiation sources (such as BESSY II, Berlin, Germany and SRC, Madison, USA) regularly used by project author since 2002 is first of all caused by high radiation intensity and cutting edge analytical equipment that will allow to get most accurate, precise and reliable data.
Problems to be solved and results: Expected results: - New experimental data on the electron energy structure of the investigated objects, obtained by ultrasoft X-ray spectroscopy methods with the use of synchrotron radiation and laboratory equipment (X-ray absorption near edge structure provides information about conduction band structure; Ultrasoft X-ray emission spectroscopy provides information about valence band structure). - Core levels binding energies and effective charge states information obtained by X-ray photoelectron spectroscopy with the use of synchrotron radiation. - Surface layers phase composition information. - The analysis of the size factor influence on electron-energy spectrum of the investigated structures. - Dependences of the revealing properties of the investigated nanostructures based on silicon and its compounds on the electron energy spectrum, its features and the phase composition. - Analysis and dependences of the structures contained silicon nanoparticles production technology peculiarities on the electron energy spectrum, its features and the phase composition. Scientific and practical importance of the obtained results based on the determined properties, regularities and peculiarities of the electron-energy spectrum and phase composition of the investigated structures showing new unique properties opens scientific basis for developing of the unique structure formation nanotechnologies. Obtained results could be used for developing and following adjustment of the technological aspects for creation of the quantum sized structures with the specified properties. This is necessary for creation of the in principle new micro- nano- and optoelectronic devices based on silicon such emitting devices. Results of the investigation could be used for scientific groups developing the technologies of the nanosized semiconductor structures producing, investigating their properties and investigating solid state and surfaces electron structure.
Scientific keywords synchrotron investigations, nanostructures, thin layers, silicon, electron structure, spectroscopy, nanotechnologies
Publications on the topic (other references) 1. X-ray spectroscopy investigation of the porous silicon phase composition under high temperature annealing / E.P. Domashevskaya, V.M, Kashkarov, E.Yu. Manukovskii, V.A. Terekhov, S.Yu. Turishchev // Condensed matter and interface boundaries (Condensirovanniye sredy i mezhfazniye granitsy). – 2000. – V.1, N1. – P. 37 – 44. 2. USXES and optical phenomena in Si low-dimensional structures dependent on morphology and silicon oxide composition on Si surface / T.V. Torchynska, M. Morales Rodrigues, G.P. Polupan, L.I. Khomenkova, N.E. Korsunskaya, V.P. Papusha, L.V. Scherbina, E.P. Domashevskaya, V.A. Terekhov, S. Yu. Turishchev // Surface Review and Letters. – 2002. – V.9, №2. – Р. 1047 – 1052. 3. Synchrotron investigation of the specific features in the electron energy spectrum of silicon nanostructures / E.P. Domashevskaya, V.A. Terekhov, V.M. Kashkarov, E.Yu. Manukovskii, S.Yu. Turishchev, S.L. Molodtsov, D.V. Vyalikh, A.F. Khokhlov, A.I. Mashin, V.G. Shengurov, S.P. Svetlov and V.Yu. Chalkov // Physics of the solid state. – 2004. – V. 46, N.2. – P. 345 – 350. 4. A study of electronic and atomic structures in a-SixC1-x amorphous alloys using ultrasoft X-ray emission spectroscopy / V.A. Terekhov, E.I. Terukov, I.N. Trapeznikova, V.M. Kashkarov, O.V. Kurilo, S.Yu. Turishchev, A.B. Golodenko, E.P. Domashevskaya // Semiconductors. – 2005. – V. 39, N.7. – P. 830 – 834. 5. Synchrotron Investigations of the Electron Structure of Silicon Nanocrystals in a SiO2 Matrix / V. A. Terekhov, S. Yu. Turishchev, V. M. Kashkarov, E. P. Domashevskaya, A. N. Mikhailov, D.I. Tetel\\\'baum. // Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. – 2007. – V.1, N1. – Р. 55 – 59. 6. XANES and USXES investigations of interatomic interaction at the grain boundaries in nanocomposites (Co41Fe39B20)x(SiO2)1−x / E.P. Domashevskaya, S.A. Storozhilov, S.Yu Turishchev, V.M. Kashkarov, V.A. Terekhov, O.V. Stognej, Yu E. Kalinin, S.L. Molodtsov // Journal of Electron Spectroscopy and Related Phenomena. – 2007. – 156 – 158, – P. 180 – 185. 7. Investigations of the electron energy structure and phase composition of porous silicon with different porosity / S.Yu. Turishchev, V.A. Terekhov, V.M. Kashkarov, E.P. Domashevskaya, S.L. Molodtsov, D.V. Vyalykh // Journal of Electron Spectroscopy and Related Phenomena. – 2007. – 156 – 158, – P. 445 – 451. 8. Silicon nanocrystals in SiO2 matrix obtained by ion implantation under cyclic dose accumulation / V.A. Terekhov, S.Yu. Turishchev, V.M. Kashkarov, E.P. Domashevskaya, A.N. Mikhailov, D.I. Tetel’baum // Physica E: Low-dimensional Systems and Nanostructures – 2007. – 38, – P. 16 – 20. 9. Investigations of Interatomic Interactions in (CoFeZr)x(SiO2)l-x Nanocomposites / E.P. Domashevskaya, S.A. Storozhilov, S.Yu. Turishchev, V.M. Kashkarov, V.A. Terekhov, O.V. Stognej, Yu.E. Kalinin, A.V. Sitnikov and S.L. Molodtsov // Electromagnetic Materials, Proceedings of the International Conference on Materials for Advanced Technologies ICMAT 2007 (Symposium P) Suntec, Singapore 1 - 6 July, 2007: Singapore, 2007, – P. 173 – 179. 10. Structure and optical properties of silicon nanopowders / V.A. Terekhov, V.M. Kashkarov, S.Yu. Turishchev, K.N. Pankov, V.A. Volodin, M.D. Efremov, D.V. Marin, A.G. Cherkov, S.V. Goryainov, A.I. Korchagin, V.V. Cherepkov, A.V. Lavrukhin, S.N. Fadeev, R.A. Salimov, S.P. Bardakhanov // Material science and engineering, accepted manuscript – article in press; published online: http://dx.doi.org/10.1016/j.mseb.2007.08.014 (DOI:10.1016/j.mseb.2007.08.014).
Description of previous and present experience in International Cooperation -
Previous participation in EU’s Framework Programme projects