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Voronezh State Technical University
- NMP-FP7-2010-4.0-2 Capacity building for the development of nanotech-based multiparameter sensors
Date of filling in
Voronezh State Technical University
Moskovsky prospect, 14, 394026, Voronezh, Russia
Chair of Semiconductor Electronics and Nanoelectronics
Rembeza Stanislav, DSc, Professor
Nanosciences, nanotechnologies, materials and new production technologies (NMP)
NMP-FP7-2010-4.0-2 Capacity building for the development of nanotech-based multiparameter sensors
Short description of the organization (max 12 lines):
Voronezh State Technical University was found 51 years ago and has 7 faculties prepared specialists for different industry branches (aircraft, radio-technical, mechanical engineering etc.). The Technical University has a many-years collaboration with enterprises and scientific research institutes. Department of Semiconductor Electronics and Microelectronics exists 47 years at Physical-Technical faculty and prepares engineers for microelectronic industry. Research groups of the department have a possibility to introduce their elaborations in design and fabrication of integrate circuits and original semiconductor devices into industry production. The research team of 3 Dr.Sci., 7 PhD, 8 engineers, post-graduate students and masters, has 12 years experience of work in the field of sensors fabrication and investigation. It has 6 Patents of Russian Federation to design, microelectronic technology of fabrication and composition of sensitive layers for toxic and explosive gases sensors. The research team has more than 100 publications on the topic in Russian and international journals and in proceedings of international conferences. The experimental sensors for control of CO, CH4 and other hydrocarbons have already been elaborated and tested.
Project is devoted to the creation of next-generation autonomic portable system for quality control and ecological monitoring of environment air by detection of toxic and explosive gases. The main element of this system is a miniature, economic, cheap, rapid active, high sensitive gas sensor produced according to the microelectronic technology. Sensor is a crystal of oxidized silicon (1x1 mm2) with integrated thin film structure of heater, thermometer and gas sensitive layer. The main element of this sensor is gas sensitive layer produced by thin film technology of reactive magnetron sputtering. As sensitive layer we use nanocomposites on the base of SnO2 with additives up to (10-15) at. % of other oxides ( SiO2, MnO, Y2O3 etc). Special technology and treatment of the films allow to produce samples with grain size up to (5-10) nm with high sensitivity and selectivity to different gases. Portable system for gas sensor signal indication will be produced with the help of analog-digital transduction and programmable microcontroller provided high reliability and noise stability of the useful signal. All system can be produced as a single integral circuit (IC). Accumulator power source, selfcalibration and testing of sensor units and programmable controller provide high autonomic work of the whole system.
Problems to be solved and results: 1. Synthesis and investigation of electrical-physical and gas sensitive properties of different film nanocomposites on the base of SnO2 and other oxides (Sn-Si-O, Sn-Mn-O etc) for selection of sensor material detected various gases. 2. Elaboration of construction, fabrication technology and production of experimental microelectronic gas sensors, and investigation of their main parameters. 3. Elaboration of construction, electronic scheme of experimental programmable indicators for toxic and explosive gas sensor signals, and investigation of their parameters.
Electronics Microelectronics Nanotechnology Nanocomposites Gas sensors Digital indication Information systems
Publications on the topic (other references)
Rembeza E.S., Richard O., Van Landuyt J. “Influence of laser and isothermal treatments on the microstructural properties of SnO2 films” - Materials Research Bulletin. - 1999. - V.34. – N 10/11. - P. 1527-1533.
Rembeza S.I., Svistova T.V., Rembeza E.S., Borsiakova O.I. “Electrical resistivity and gas response mechanism of nanocrystalline SnO2 films in a wide temperature range” - Physica Status Solidi (a).- 2000. - V.179. - P. 147-152.
Rembeza S.I., Svistova T.V., Rembeza E.S., Borsiakova O.I. “Microstructure and physical properties of thin SnO2 films” – Semiconductors. - 2000. - V.35, N 7. - P. 762-765.
Rembeza S.I., Svistova T.V., Rembeza E.S., Gorlova G.V. "Semiconductor metal oxide gas sensor” Patent of Russian Federation N 2206082 of 10.06.2003.
Rembeza S.I., Rembeza E.S., Svistova T.V. “Electrophysical properties of gas sensitive films SnO2 doped with palladium” - Sensors & Transducers Journal. – 2004. - V.40, N 2. – P. 145-151.
Rembeza S.I., Buslov V.A., Rembeza E.S., Vikin O.G., Vikin G.A. “Solid integral gas sensor” - Patent of Russian Federation N 2257567 of 19.05.2005
Rembeza S.I., Svistova T.V., Rembeza E.S., Borsyakova O.I. “Physical properties of SnO2 films subjected to incoherent pulsed radiation” – Semiconductors. - 2006. - V.40, № 1. – С.57-60.
Rembeza E.S., Rembeza S.I., Sinelnikov B.M., Svistova T.V., Domashevskaya E.P. “Thin film nanocomposites for gas sensors” - Journal of the Rare Metal Materials and Engineering. -2006. - V.35, suppl. 3. - P. 33-35.
Rembeza E.S., Rembeza S.I., Grechkina M.V., Domashevskaya E.P. “Preparation and properties of thin film nanocomposites Sn-Si-O, Sn-Mn-O, Sn-Y-O, Sn-Zr-O” - China Nano2007. Proc. Intern.Conf. on Nanosience and Technology, Beijing (China). - June 2007. - P.243.
Rembeza E.S., Rembeza S.I. “Nanocomposites Sn-Si-O and Sn-Mn-O for gas sensors“ - Sensors & Transducers Journal. - 2007. - V.85, N11. - P. 1739-1744.
Rembeza S.I., Svistova T.V., Rembeza E.S., Dyrda N.N. “Method of fabrication of sensitive element for gas sensors” - Patent of Russian Federation N 2307346 of 27.09.97.
Description of previous and present experience in International Cooperation
2008-2009 joint Russian-Chinese project (RFBR-GFEN grant 07-02-92102 «Fabrication and Surface/Interface Structure-Gas Sensing Property Relationship of SnO2- based Nanocomposite Thin Films»
Previous participation in EU’s Framework Programme projects
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