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Voronezh State University
- Atomic and electron structure of nanosystems
Date of filling in
Voronezh State University
Universitetskaya pl., 1, Voronezh, 304006, Russia
Solid State Physics and Nanostructures Department, Physics Faculty
Domashevskaya Evelina, DSc, Professor
Nanosciences, nanotechnologies, materials and new production technologies (NMP)
Atomic and electron structure of nanosystems
Short description of the organization (max 12 lines):
The aim of the project: Obtaining data of the electron-energy spectra of the states in valence and conduction bands, revealing its peculiarities under passage to nanosized structures with quantum wells, quantum wires, quantum dots and nanocomposites with the use of X-ray and electron spectroscopy methods including usage of synchrotron radiation. Determination of the different energy states of atoms in quantum dots, nanoclusters and nanocomposites for explanation of the nonlinear electrophysical, magnetic and optical properties in connection with the size effects. Modeling of the electron energy spectra and nanosystems spectral characteristics. Tasks: - revealing of the substructure and quantum sized effects in nanostructures and nanocomposites; - identification of the energy levels caused by substructure and quantum sized effects; - revealing of the Coulomb blockade and single electron tunneling influence on nonlinear electrophysical properties; - determination of the density of the localized states influence on on nonlinear electrophysical and magnetic properties; Methods for the investigations: - ultrasoft X-ray emission spectroscopy (UMRES) – electron structure of the valence band; - X-ray absorption near edge structure (XANES) – electron structure of the conduction band; - X-ray photoelectron spectroscopy (XPS) – binding energies of the core levels and effective charge states of atoms. - Infrared (IR) and photoluminescence (PL) spectroscopy – localized states in band gap, peculiarities of their distribution; - Different computer simulation techniques. In framework on national level collaboration the technological and analytical equipment of the major Russian academic scientific centers and state universities could be used. The use of synchrotron radiation sources (such as BESSY II, Berlin, Germany) regularly used for scientific investigations under authors leadership since 2001 is caused by high radiation intensity, precise and reliable data.
Problems to be solved and results: Expected results: - New experimental data on the electron energy structure of the investigated systems, obtained by ultrasoft X-ray spectroscopy methods with the use of synchrotron radiation and laboratory equipment (X-ray absorption near edge structure provides information about conduction band structure; Ultrasoft X-ray emission spectroscopy provides information about valence band structure). - Core levels binding energies and effective charge states information obtained by X-ray photoelectron spectroscopy with the use of synchrotron radiation. - Surface layers phase composition information. - The analysis of the size factor influence on electron-energy spectrum of the investigated structures. - Dependences of the revealing properties of the investigated nanostructures on the electron energy spectrum, its features and the phase composition. - Analysis and dependences of the structures contained nanoparticles production technology peculiarities on the electron energy spectrum, its features and phase composition. Scientific and practical importance of the obtained results based on the determined properties, regularities and peculiarities of the electron-energy spectrum and phase composition of the investigated structures showing new unique properties opens scientific basis for developing of the unique structure formation nanotechnologies. Obtained results could be used for developing and following adjustment of the technological aspects for creation of the quantum sized structures with the specified properties. This is necessary for creation of the in principle new micro- nano- and optoelectronic devices. Results of the investigation could be used for scientific groups developing the technologies of the nanosized semiconductor structures producing, investigating their properties and investigating solid state and surfaces electron structure.
atomic and electron structure, nanosystems, nanotechnologies, synchrotron investigations, X-ray spectroscopy
Publications on the topic (other references)
XPS, USXS and PLS investigations of porous silicon / E.P. Domashevskaya, V.M. Kashkarov, E.Yu. Manukovskii, A.V. Shchukarev, V.A. Terekhov. // J.Electron.Spectr.and Rel. Phen.-1998.-v.88-91. -p.969-972.
Determination of the phase composition of the surface layers in porous silicon using ultrasoft X-ray emission spectroscopy and X-ray photoelectron spectroscopy techniques / V.M. Kashkarov, E.Yu. Manukovskii, A.V. Shchukarev, E.P. Domashevskaya // J. Electron Spectr. and Rel. Phen. – 2001. – V. 114-116. – P. 895 – 900.
USXES and optical phenomena in Si low-dimensional structures dependent on morphology and silicon oxide composition on Si surface / T.V. Torchynska, M. Morales Rodrigues, G.P. Polupan, L.I. Khomenkova, N.E. Korsunskaya, V.P. Papusha, L.V. Scherbina, E.P. Domashevskaya, V.A. Terekhov, S. Yu. Turishchev // Surface Review and Letters. – 2002. – V.9, №2. – Р. 1047 – 1052.
Synchrotron investigation of an electron energy spectrum in III-V-based nanostructures / E.P. Domashevskaya, V.A. Terekhov, V.M. Kashkarov, S.Yu. Turishchev, S.L. Molodtsov, D.V. Vyalikh, D.A. Vinokurov, V.P. Ulin, M.V. Shishkov, I.N. Arsent`ev, I.S. Tarasov, Zh. I. Alferov // Semiconductors. – 2003. – V.37, N8. – P. 992-997.
Synchrotron investigation of the specific features in the electron energy spectrum of silicon nanostructures / E.P. Domashevskaya, V.A. Terekhov, V.M. Kashkarov, E.Yu. Manukovskii, S.Yu. Turishchev, S.L. Molodtsov, D.V. Vyalikh, A.F. Khokhlov, A.I. Mashin, V.G. Shengurov, S.P. Svetlov and V.Yu. Chalkov // Physics of the solid state. – 2004. – V. 46, N.2. – P. 345 – 350.
A study of electronic and atomic structures in a-SixC1-x amorphous alloys using ultrasoft X-ray emission spectroscopy / V.A. Terekhov, E.I. Terukov, I.N. Trapeznikova, V.M. Kashkarov, O.V. Kurilo, S.Yu. Turishchev, A.B. Golodenko, E.P. Domashevskaya // Semiconductors. – 2005. – V. 39, N.7. – P. 830 – 834.
TEM and XANES investigations and optical properties of SnO nanolayers / E.P. Domashevskaya, O.A. Chuvenkova, V.M. Kashkarov, S.B. Kushev, S.V. Ryabtsev, S.Yu. Turishchev, Yu.A. Yurakov // Surface and Interface Analysis. – 2006. – 38, – P. 514 – 517.
Synchrotron Investigations of the Electron Structure of Silicon Nanocrystals in a SiO2 Matrix / V. A. Terekhov, S. Yu. Turishchev, V. M. Kashkarov, E. P. Domashevskaya, A. N. Mikhailov, D.I. Tetel\'baum. // Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. – 2007. – V.1, N1. – Р. 55 – 59.
XANES and USXES investigations of interatomic interaction at the grain boundaries in nanocomposites (Co41Fe39B20)x(SiO2)1−x / E.P. Domashevskaya, S.A. Storozhilov, S.Yu Turishchev, V.M. Kashkarov, V.A. Terekhov, O.V. Stognej, Yu E. Kalinin, S.L. Molodtsov // Journal of Electron Spectroscopy and Related Phenomena. – 2007. – 156 – 158, – P. 180 – 185.
Synchrotron investigations of the initial stage of tin nanolayers oxidation / E.P. Domashevskaya, Yu.A. Yurakov, S.V. Ryabtsev, O.A. Chuvenkova, V.M. Kashkarov, S.Yu. Turishchev // Journal of Electron Spectroscopy and Related Phenomena. – 2007. – 156 – 158, – P. 340 – 343.
Investigations of the electron energy structure and phase composition of porous silicon with different porosity / S.Yu. Turishchev, V.A. Terekhov, V.M. Kashkarov, E.P. Domashevskaya, S.L. Molodtsov, D.V. Vyalykh // Journal of Electron Spectroscopy and Related Phenomena. – 2007. – 156 – 158, – P. 445 – 451.
SnOx obtaining by thermal oxidation of nanoscale tin films in the air and its characterization / E.P. Domashevskaya, S.V. Ryabtsev, Yu.A. Yurakov, O.A. Chuvenkova, V.M. Kashkarov, S.Yu. Turishchev, S.B. Kushev, A.N. Lukin // Thin Solid Films – 2007. – 515, – P. 6350 – 6355.
Silicon nanocrystals in SiO2 matrix obtained by ion implantation under cyclic dose accumulation / V.A. Terekhov, S.Yu. Turishchev, V.M. Kashkarov, E.P. Domashevskaya, A.N. Mikhailov, D.I. Tetel’baum // Physica E: Low-dimensional Systems and Nanostructures – 2007. – 38, – P. 16 – 20.
Investigations of Interatomic Interactions in (CoFeZr)x(SiO2)l-x Nanocomposites / E.P. Domashevskaya, S.A. Storozhilov, S.Yu. Turishchev, V.M. Kashkarov, V.A. Terekhov, O.V. Stognej, Yu.E. Kalinin, A.V. Sitnikov and S.L. Molodtsov // Electromagnetic Materials, Proceedings of the International Conference on Materials for Advanced Technologies ICMAT 2007 (Symposium P) Suntec, Singapore 1 - 6 July, 2007: Singapore, 2007, – P. 173 – 179.
Electron structure investigations of InGaP/GaAs(100) heterostructures with InP quantum dots / E. P. Domashevskaya; V. A. Terekhov; V. M. Kashkarov; S. Yu. Turishchev; S. L. Molodtsov; D. V. Vyalikh; I. N. Arsentyev; I. S. Tarasov; D. A. Vinokurov; A. L. Stankevich // International Journal of Nanoscience – 2007. – V.6, Issue 3/4. – Р. 215 – 219.
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