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Regional Information Centre
for Scientific and Technological Cooperation with EU
 

FP7 Partner offer profile

Institute for Physics of Microstructures of the Russian Academy of Sciences (IPM RAS) - ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration; ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems; ICT-2007.3.5: Photonic components and subsystems; ICT-2007.3.6: Micro/nanosystems; ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems; ICT-2007.8.0: FET Open scheme

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Date of filling in 18.06.2008
Organization name Institute for Physics of Microstructures of the Russian Academy of Sciences (IPM RAS)
Organization adress GSP-105, Nizhny Novgorod, 603950, RF
Department/Unit Department of nanostructure technologies and devices
Contact person Shashkin Vladimir, PhD, Head of Department
Phone +7-831-4385536
Fax +7-831-4385553
E-Mail sha@ipm.sci-nnov.ru
Web-site http://ipm.sci-nnov.ru/structure/subdivision/140
Organization type
  • Research
Special Programme
Theme
Information and Communication Technologies (ICT)
Call identifier
FP7-ICT-2007-C
Topic number ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration; ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems; ICT-2007.3.5: Photonic components and subsystems; ICT-2007.3.6: Micro/nanosystems; ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems; ICT-2007.8.0: FET Open scheme
Call Deadline
Short description of the organization (max 12 lines): Department consists of about 20 scientists and technologists fully engaged in R&D activity in the field of semiconductor physics. The group has closely tied internal structure and possesses a wide range of analytical equipment (including that provided by Center of Collective Access at IPM RAS). This enables both academic (experimental and theory) and device-oriented studies on the “designed-made-measured” basis. As materials, III-V, metals and large molecules, as well as heterostructures based on them, are mainly dealt with. As phenomena, optical, electro-optical and photonic properties of these materials are under consideration, as well as MEMS. Long-term experience in various characterization techniques determines high yield of comprehensive information on samples fabricated within the IPM RAS or supplied by other labs. The group is open for collaboration with industrial bodies and academia.
Expertise offered -
Scientific keywords MOVPE III-V Hetero-structures Diagnostics Hybrids
Publications on the topic (other references)
  • M.N. Drozdov, V.M. Danil’tsev, L.D. Moldavskaya, V.I. Shashkin “Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots” Technical Physics Letters, V.34, no.1, p. 1-3 (2008)
  • L.D. Moldavskaya, N.V. Vostokov, D.M. Gaponova, V.M. Danil’tsev, M.N. Drozdov, Yu.N. Drozdov, V.I. Shashkin “The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors” Semiconductors+, V.42, no.1, с. 99-103 (2008)
  • M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, L. D. Moldavskaya, A. V. Murel’, V. I. Shashkin “Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer“ Semiconductors+, V.42, no.3, p. 298-304 (2008)
  • V.I. Shashkin, A.V. Murel “Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier” Physics of the Solid State, V.50, no.3, p. 538-542 (2008)
  • V.I. Shashkin, A.V. Murel “Diagnostics of low-barrier Schottky diodes with near-surface δ-doping” Semiconductors+, V.42, no.4, p. 490-492 (2008)
  • N. V. Alkeev, S. V. Averin, A. A. Dorofeev and V. I. Shashkin “A method for measuring the shot noise in Schottky diodes with reduced barrier height” Journal of Communications Technology and Electronics, Vol. 53, No. 2 (2008) 233-237
  • N.V. Vostokov, V.I. Shashkin “Admittance and non-linear capacity of multilayer metal-semiconductor structure” Semiconductors+, V.42, no.7, p.799-803 /Russian version/ (2008)
  • P.V. Volkov, A.V. Goryunov, V.M. Danil’tsev, A.Yu. Luk’aynov, D.A. Pryakhin, A.D. Tertyshnik, O.I. Khrykin, V.I. Shashkin “Optical monitoring of parameters of technological processes during metalorganic vapor phase epitaxy” Journal of Surface investigation, №8, p.1-6 /Russian version/ (2008)
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor“ Technical Physics, Vol. 53, No. 5 (2008) 629-632
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Effect of cyclic annealing on the static and high-frequency characteristics of YBCO-film-based resonant structures” Technical Physics Letters, Vol. 34, No. 5 (2008) 384-386
  • G. L. Pakhomov “Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices” Microelectronics Journal, V. 38, In Press, Corrected Proof, Available online 22 May 2008
  • G. L. Pakhomov, E. S. Leonov, A. Yu. Klimov “Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures” Microelectronics Journal, Volume 38, Iss. 6-7 (2007) 682-685
  • G. L. Pakhomov, D. A. Kosterin, L. G. Pakhom, T.-F. Guo “Doping of phthalocyanine films: structural reorganization vs. acceptor effect” Journal of Materials Science: Materials in Electronics, Vol. 19, No. 6 (2008) 500-504
Description of previous and present experience in International Cooperation -
Previous participation in EU’s Framework Programme projects