RIC
Regional Information Centre
for Scientific and Technological Cooperation with EU
 

Scientific Organisation Questionnaire

Institute for Physics of Microstructures of the Russian Academy of Sciences (IPM RAS) 
The type of the organization  
Country RU 
Region
City
Coordinator international contacts manager,  Kraev Alexey V.
Address RU, -, 603950 - GSP-105
Telephone +7-831-4385536 
Fax +7-831-4385553 
Email
web-page http://www.ipm.sci-nnov.ru/
Brief Description Department consists of about 20 scientists and technologists fully engaged in R&D activity in the field of semiconductor physics. The group has closely tied internal structure and possesses a wide range of analytical equipment (including that provided by Center of Collective Access at IPM RAS). This enables both academic (experimental and theory) and device-oriented studies on the “designed-made-measured” basis. As materials, III-V, metals and large molecules, as well as heterostructures based on them, are mainly dealt with. As phenomena, optical, electro-optical and photonic properties of these materials are under consideration, as well as MEMS. Long-term experience in various characterization techniques determines high yield of comprehensive information on samples fabricated within the IPM RAS or supplied by other labs. The group is open for collaboration with industrial bodies and academia. 
Offers of high school on participation in joint researches with the European universities within the limits of thematic priorities of the Seventh frame program of scientifically-technological development of EU
Cooperation Information And Communication Technologies - ICT ICT for Mobility, Environmental Sustainability and Energy Efficiency

ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration
ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems
ICT-2007.3.5: Photonic components and subsystems
ICT-2007.3.6: Micro/nanosystems
ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems
ICT-2007.8.0: FET Open scheme
The brief description of the project  -
Expected results  -
Keywords  MOVPE III-V Hetero-structures Diagnostics Hybrids
Published works  
    M.N. Drozdov, V.M. Danil’tsev, L.D. Moldavskaya, V.I. Shashkin “Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots”
  • Technical Physics Letters, V.34, no.1, p. 1-3 (2008)
  • L.D. Moldavskaya, N.V. Vostokov, D.M. Gaponova, V.M. Danil’tsev, M.N. Drozdov, Yu.N. Drozdov, V.I. Shashkin “The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors” Semiconductors+, V.42, no.1, с. 99-103 (2008)
  • M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, L. D. Moldavskaya, A. V. Murel’, V. I. Shashkin
  • “Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer“ Semiconductors+, V.42, no.3, p. 298-304 (2008)
  • V.I. Shashkin, A.V. Murel “Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier” Physics of the Solid State, V.50, no.3, p. 538-542 (2008)
  • V.I. Shashkin, A.V. Murel “Diagnostics of low-barrier Schottky diodes with near-surface δ-doping” Semiconductors+, V.42, no.4, p. 490-492 (2008)
  • N. V. Alkeev, S. V. Averin, A. A. Dorofeev and V. I. Shashkin “A method for measuring the shot noise in Schottky diodes with reduced barrier height” Journal of Communications Technology and Electronics, Vol. 53, No. 2 (2008) 233-237
  • N.V. Vostokov, V.I. Shashkin “Admittance and non-linear capacity of multilayer metal-semiconductor structure” Semiconductors+, V.42, no.7, p.799-803 /Russian version/ (2008)
  • P.V. Volkov, A.V. Goryunov, V.M. Danil’tsev, A.Yu. Luk’aynov, D.A. Pryakhin, A.D. Tertyshnik, O.I. Khrykin, V.I. Shashkin “Optical monitoring of parameters of technological processes during metalorganic vapor phase epitaxy” Journal of Surface investigation, №8, p.1-6 /Russian version/ (2008)
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor“ Technical Physics, Vol. 53, No. 5 (2008) 629-632
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Effect of cyclic annealing on the static and high-frequency characteristics of YBCO-film-based resonant structures” Technical Physics Letters, Vol. 34, No. 5 (2008) 384-386
  • G. L. Pakhomov “Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices” Microelectronics Journal, V. 38, In Press, Corrected Proof, Available online 22 May 2008
  • G. L. Pakhomov, E. S. Leonov, A. Yu. Klimov “Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures” Microelectronics Journal, Volume 38, Iss. 6-7 (2007) 682-685
  • G. L. Pakhomov, D. A. Kosterin, L. G. Pakhom, T.-F. Guo “Doping of phthalocyanine films: structural reorganization vs. acceptor effect” Journal of Materials Science: Materials in Electronics, Vol. 19, No. 6 (2008) 500-504
Date of last change of the project  04.07.2008
Family Name and first name of a contact person  Shashkin Vladimir I.
Position in Organization  Head of Department
Title  Ph.D.
Department/Unit, Chair  Department of Technology of nanostructures and devices (№140)
Address  RU, -, 603950 Nizhny Novgorod GSP-105
WWW address (URL)   http://www.ipm.sci-nnov.ru
E-mail address  
Telephone  +7-831-4385536
Telefax  +7-831-4385553
The countries of partners under the project  All
Types of the project
  • Collaborative project (CP)
 
Pervasive and Trusted Network and Service Infrastructures

ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration
ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems
ICT-2007.3.5: Photonic components and subsystems
ICT-2007.3.6: Micro/nanosystems
ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems
ICT-2007.8.0: FET Open scheme
The brief description of the project  -
Expected results  -
Keywords  MOVPE III-V Hetero-structures Diagnostics Hybrids
Published works  
    M.N. Drozdov, V.M. Danil’tsev, L.D. Moldavskaya, V.I. Shashkin “Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots”
  • Technical Physics Letters, V.34, no.1, p. 1-3 (2008)
  • L.D. Moldavskaya, N.V. Vostokov, D.M. Gaponova, V.M. Danil’tsev, M.N. Drozdov, Yu.N. Drozdov, V.I. Shashkin “The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors” Semiconductors+, V.42, no.1, с. 99-103 (2008)
  • M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, L. D. Moldavskaya, A. V. Murel’, V. I. Shashkin
  • “Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer“ Semiconductors+, V.42, no.3, p. 298-304 (2008)
  • V.I. Shashkin, A.V. Murel “Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier” Physics of the Solid State, V.50, no.3, p. 538-542 (2008)
  • V.I. Shashkin, A.V. Murel “Diagnostics of low-barrier Schottky diodes with near-surface δ-doping” Semiconductors+, V.42, no.4, p. 490-492 (2008)
  • N. V. Alkeev, S. V. Averin, A. A. Dorofeev and V. I. Shashkin “A method for measuring the shot noise in Schottky diodes with reduced barrier height” Journal of Communications Technology and Electronics, Vol. 53, No. 2 (2008) 233-237
  • N.V. Vostokov, V.I. Shashkin “Admittance and non-linear capacity of multilayer metal-semiconductor structure” Semiconductors+, V.42, no.7, p.799-803 /Russian version/ (2008)
  • P.V. Volkov, A.V. Goryunov, V.M. Danil’tsev, A.Yu. Luk’aynov, D.A. Pryakhin, A.D. Tertyshnik, O.I. Khrykin, V.I. Shashkin “Optical monitoring of parameters of technological processes during metalorganic vapor phase epitaxy” Journal of Surface investigation, №8, p.1-6 /Russian version/ (2008)
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor“ Technical Physics, Vol. 53, No. 5 (2008) 629-632
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Effect of cyclic annealing on the static and high-frequency characteristics of YBCO-film-based resonant structures” Technical Physics Letters, Vol. 34, No. 5 (2008) 384-386
  • G. L. Pakhomov “Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices” Microelectronics Journal, V. 38, In Press, Corrected Proof, Available online 22 May 2008
  • G. L. Pakhomov, E. S. Leonov, A. Yu. Klimov “Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures” Microelectronics Journal, Volume 38, Iss. 6-7 (2007) 682-685
  • G. L. Pakhomov, D. A. Kosterin, L. G. Pakhom, T.-F. Guo “Doping of phthalocyanine films: structural reorganization vs. acceptor effect” Journal of Materials Science: Materials in Electronics, Vol. 19, No. 6 (2008) 500-504
Date of last change of the project  04.07.2008
Family Name and first name of a contact person  Shashkin Vladimir I.
Position in Organization  Head of Department
Title  Ph.D.
Department/Unit, Chair  Department of Technology of nanostructures and devices (№140)
Address  RU, -, 603950 Nizhny Novgorod GSP-105
WWW address (URL)   http://www.ipm.sci-nnov.ru
E-mail address  
Telephone  +7-831-4385536
Telefax  +7-831-4385553
The countries of partners under the project  All
Types of the project
  • Collaborative project (CP)
 
Cognitive Systems, Interaction, Robotics

ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration
ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems
ICT-2007.3.5: Photonic components and subsystems
ICT-2007.3.6: Micro/nanosystems
ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems
ICT-2007.8.0: FET Open scheme
The brief description of the project  -
Expected results  -
Keywords  MOVPE III-V Hetero-structures Diagnostics Hybrids
Published works  
    M.N. Drozdov, V.M. Danil’tsev, L.D. Moldavskaya, V.I. Shashkin “Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots”
  • Technical Physics Letters, V.34, no.1, p. 1-3 (2008)
  • L.D. Moldavskaya, N.V. Vostokov, D.M. Gaponova, V.M. Danil’tsev, M.N. Drozdov, Yu.N. Drozdov, V.I. Shashkin “The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors” Semiconductors+, V.42, no.1, с. 99-103 (2008)
  • M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, L. D. Moldavskaya, A. V. Murel’, V. I. Shashkin
  • “Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer“ Semiconductors+, V.42, no.3, p. 298-304 (2008)
  • V.I. Shashkin, A.V. Murel “Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier” Physics of the Solid State, V.50, no.3, p. 538-542 (2008)
  • V.I. Shashkin, A.V. Murel “Diagnostics of low-barrier Schottky diodes with near-surface δ-doping” Semiconductors+, V.42, no.4, p. 490-492 (2008)
  • N. V. Alkeev, S. V. Averin, A. A. Dorofeev and V. I. Shashkin “A method for measuring the shot noise in Schottky diodes with reduced barrier height” Journal of Communications Technology and Electronics, Vol. 53, No. 2 (2008) 233-237
  • N.V. Vostokov, V.I. Shashkin “Admittance and non-linear capacity of multilayer metal-semiconductor structure” Semiconductors+, V.42, no.7, p.799-803 /Russian version/ (2008)
  • P.V. Volkov, A.V. Goryunov, V.M. Danil’tsev, A.Yu. Luk’aynov, D.A. Pryakhin, A.D. Tertyshnik, O.I. Khrykin, V.I. Shashkin “Optical monitoring of parameters of technological processes during metalorganic vapor phase epitaxy” Journal of Surface investigation, №8, p.1-6 /Russian version/ (2008)
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor“ Technical Physics, Vol. 53, No. 5 (2008) 629-632
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Effect of cyclic annealing on the static and high-frequency characteristics of YBCO-film-based resonant structures” Technical Physics Letters, Vol. 34, No. 5 (2008) 384-386
  • G. L. Pakhomov “Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices” Microelectronics Journal, V. 38, In Press, Corrected Proof, Available online 22 May 2008
  • G. L. Pakhomov, E. S. Leonov, A. Yu. Klimov “Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures” Microelectronics Journal, Volume 38, Iss. 6-7 (2007) 682-685
  • G. L. Pakhomov, D. A. Kosterin, L. G. Pakhom, T.-F. Guo “Doping of phthalocyanine films: structural reorganization vs. acceptor effect” Journal of Materials Science: Materials in Electronics, Vol. 19, No. 6 (2008) 500-504
Date of last change of the project  04.07.2008
Family Name and first name of a contact person  Shashkin Vladimir I.
Position in Organization  Head of Department
Title  Ph.D.
Department/Unit, Chair  Department of Technology of nanostructures and devices (№140)
Address  RU, -, 603950 Nizhny Novgorod GSP-105
WWW address (URL)   http://www.ipm.sci-nnov.ru
E-mail address  
Telephone  +7-831-4385536
Telefax  +7-831-4385553
The countries of partners under the project  All
Types of the project
  • Collaborative project (CP)
 
Components, systems, engineering

ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration
ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems
ICT-2007.3.5: Photonic components and subsystems
ICT-2007.3.6: Micro/nanosystems
ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems
ICT-2007.8.0: FET Open scheme
The brief description of the project  -
Expected results  -
Keywords  MOVPE III-V Hetero-structures Diagnostics Hybrids
Published works  
    M.N. Drozdov, V.M. Danil’tsev, L.D. Moldavskaya, V.I. Shashkin “Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots”
  • Technical Physics Letters, V.34, no.1, p. 1-3 (2008)
  • L.D. Moldavskaya, N.V. Vostokov, D.M. Gaponova, V.M. Danil’tsev, M.N. Drozdov, Yu.N. Drozdov, V.I. Shashkin “The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors” Semiconductors+, V.42, no.1, с. 99-103 (2008)
  • M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, L. D. Moldavskaya, A. V. Murel’, V. I. Shashkin
  • “Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer“ Semiconductors+, V.42, no.3, p. 298-304 (2008)
  • V.I. Shashkin, A.V. Murel “Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier” Physics of the Solid State, V.50, no.3, p. 538-542 (2008)
  • V.I. Shashkin, A.V. Murel “Diagnostics of low-barrier Schottky diodes with near-surface δ-doping” Semiconductors+, V.42, no.4, p. 490-492 (2008)
  • N. V. Alkeev, S. V. Averin, A. A. Dorofeev and V. I. Shashkin “A method for measuring the shot noise in Schottky diodes with reduced barrier height” Journal of Communications Technology and Electronics, Vol. 53, No. 2 (2008) 233-237
  • N.V. Vostokov, V.I. Shashkin “Admittance and non-linear capacity of multilayer metal-semiconductor structure” Semiconductors+, V.42, no.7, p.799-803 /Russian version/ (2008)
  • P.V. Volkov, A.V. Goryunov, V.M. Danil’tsev, A.Yu. Luk’aynov, D.A. Pryakhin, A.D. Tertyshnik, O.I. Khrykin, V.I. Shashkin “Optical monitoring of parameters of technological processes during metalorganic vapor phase epitaxy” Journal of Surface investigation, №8, p.1-6 /Russian version/ (2008)
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor“ Technical Physics, Vol. 53, No. 5 (2008) 629-632
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Effect of cyclic annealing on the static and high-frequency characteristics of YBCO-film-based resonant structures” Technical Physics Letters, Vol. 34, No. 5 (2008) 384-386
  • G. L. Pakhomov “Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices” Microelectronics Journal, V. 38, In Press, Corrected Proof, Available online 22 May 2008
  • G. L. Pakhomov, E. S. Leonov, A. Yu. Klimov “Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures” Microelectronics Journal, Volume 38, Iss. 6-7 (2007) 682-685
  • G. L. Pakhomov, D. A. Kosterin, L. G. Pakhom, T.-F. Guo “Doping of phthalocyanine films: structural reorganization vs. acceptor effect” Journal of Materials Science: Materials in Electronics, Vol. 19, No. 6 (2008) 500-504
Date of last change of the project  04.07.2008
Family Name and first name of a contact person  Shashkin Vladimir I.
Position in Organization  Head of Department
Title  Ph.D.
Department/Unit, Chair  Department of Technology of nanostructures and devices (№140)
Address  RU, -, 603950 Nizhny Novgorod GSP-105
WWW address (URL)   http://www.ipm.sci-nnov.ru
E-mail address  
Telephone  +7-831-4385536
Telefax  +7-831-4385553
The countries of partners under the project  All
Types of the project
  • Collaborative project (CP)
 
Digital Libraries and Content

ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration
ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems
ICT-2007.3.5: Photonic components and subsystems
ICT-2007.3.6: Micro/nanosystems
ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems
ICT-2007.8.0: FET Open scheme
The brief description of the project  -
Expected results  -
Keywords  MOVPE III-V Hetero-structures Diagnostics Hybrids
Published works  
    M.N. Drozdov, V.M. Danil’tsev, L.D. Moldavskaya, V.I. Shashkin “Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots”
  • Technical Physics Letters, V.34, no.1, p. 1-3 (2008)
  • L.D. Moldavskaya, N.V. Vostokov, D.M. Gaponova, V.M. Danil’tsev, M.N. Drozdov, Yu.N. Drozdov, V.I. Shashkin “The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors” Semiconductors+, V.42, no.1, с. 99-103 (2008)
  • M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, L. D. Moldavskaya, A. V. Murel’, V. I. Shashkin
  • “Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer“ Semiconductors+, V.42, no.3, p. 298-304 (2008)
  • V.I. Shashkin, A.V. Murel “Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier” Physics of the Solid State, V.50, no.3, p. 538-542 (2008)
  • V.I. Shashkin, A.V. Murel “Diagnostics of low-barrier Schottky diodes with near-surface δ-doping” Semiconductors+, V.42, no.4, p. 490-492 (2008)
  • N. V. Alkeev, S. V. Averin, A. A. Dorofeev and V. I. Shashkin “A method for measuring the shot noise in Schottky diodes with reduced barrier height” Journal of Communications Technology and Electronics, Vol. 53, No. 2 (2008) 233-237
  • N.V. Vostokov, V.I. Shashkin “Admittance and non-linear capacity of multilayer metal-semiconductor structure” Semiconductors+, V.42, no.7, p.799-803 /Russian version/ (2008)
  • P.V. Volkov, A.V. Goryunov, V.M. Danil’tsev, A.Yu. Luk’aynov, D.A. Pryakhin, A.D. Tertyshnik, O.I. Khrykin, V.I. Shashkin “Optical monitoring of parameters of technological processes during metalorganic vapor phase epitaxy” Journal of Surface investigation, №8, p.1-6 /Russian version/ (2008)
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor“ Technical Physics, Vol. 53, No. 5 (2008) 629-632
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Effect of cyclic annealing on the static and high-frequency characteristics of YBCO-film-based resonant structures” Technical Physics Letters, Vol. 34, No. 5 (2008) 384-386
  • G. L. Pakhomov “Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices” Microelectronics Journal, V. 38, In Press, Corrected Proof, Available online 22 May 2008
  • G. L. Pakhomov, E. S. Leonov, A. Yu. Klimov “Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures” Microelectronics Journal, Volume 38, Iss. 6-7 (2007) 682-685
  • G. L. Pakhomov, D. A. Kosterin, L. G. Pakhom, T.-F. Guo “Doping of phthalocyanine films: structural reorganization vs. acceptor effect” Journal of Materials Science: Materials in Electronics, Vol. 19, No. 6 (2008) 500-504
Date of last change of the project  04.07.2008
Family Name and first name of a contact person  Shashkin Vladimir I.
Position in Organization  Head of Department
Title  Ph.D.
Department/Unit, Chair  Department of Technology of nanostructures and devices (№140)
Address  RU, -, 603950 Nizhny Novgorod GSP-105
WWW address (URL)   http://www.ipm.sci-nnov.ru
E-mail address  
Telephone  +7-831-4385536
Telefax  +7-831-4385553
The countries of partners under the project  All
Types of the project
  • Collaborative project (CP)
 
Towards sustainable and personalised healthcare

ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration
ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems
ICT-2007.3.5: Photonic components and subsystems
ICT-2007.3.6: Micro/nanosystems
ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems
ICT-2007.8.0: FET Open scheme
The brief description of the project  -
Expected results  -
Keywords  MOVPE III-V Hetero-structures Diagnostics Hybrids
Published works  
    M.N. Drozdov, V.M. Danil’tsev, L.D. Moldavskaya, V.I. Shashkin “Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots”
  • Technical Physics Letters, V.34, no.1, p. 1-3 (2008)
  • L.D. Moldavskaya, N.V. Vostokov, D.M. Gaponova, V.M. Danil’tsev, M.N. Drozdov, Yu.N. Drozdov, V.I. Shashkin “The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors” Semiconductors+, V.42, no.1, с. 99-103 (2008)
  • M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, L. D. Moldavskaya, A. V. Murel’, V. I. Shashkin
  • “Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer“ Semiconductors+, V.42, no.3, p. 298-304 (2008)
  • V.I. Shashkin, A.V. Murel “Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier” Physics of the Solid State, V.50, no.3, p. 538-542 (2008)
  • V.I. Shashkin, A.V. Murel “Diagnostics of low-barrier Schottky diodes with near-surface δ-doping” Semiconductors+, V.42, no.4, p. 490-492 (2008)
  • N. V. Alkeev, S. V. Averin, A. A. Dorofeev and V. I. Shashkin “A method for measuring the shot noise in Schottky diodes with reduced barrier height” Journal of Communications Technology and Electronics, Vol. 53, No. 2 (2008) 233-237
  • N.V. Vostokov, V.I. Shashkin “Admittance and non-linear capacity of multilayer metal-semiconductor structure” Semiconductors+, V.42, no.7, p.799-803 /Russian version/ (2008)
  • P.V. Volkov, A.V. Goryunov, V.M. Danil’tsev, A.Yu. Luk’aynov, D.A. Pryakhin, A.D. Tertyshnik, O.I. Khrykin, V.I. Shashkin “Optical monitoring of parameters of technological processes during metalorganic vapor phase epitaxy” Journal of Surface investigation, №8, p.1-6 /Russian version/ (2008)
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor“ Technical Physics, Vol. 53, No. 5 (2008) 629-632
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Effect of cyclic annealing on the static and high-frequency characteristics of YBCO-film-based resonant structures” Technical Physics Letters, Vol. 34, No. 5 (2008) 384-386
  • G. L. Pakhomov “Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices” Microelectronics Journal, V. 38, In Press, Corrected Proof, Available online 22 May 2008
  • G. L. Pakhomov, E. S. Leonov, A. Yu. Klimov “Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures” Microelectronics Journal, Volume 38, Iss. 6-7 (2007) 682-685
  • G. L. Pakhomov, D. A. Kosterin, L. G. Pakhom, T.-F. Guo “Doping of phthalocyanine films: structural reorganization vs. acceptor effect” Journal of Materials Science: Materials in Electronics, Vol. 19, No. 6 (2008) 500-504
Date of last change of the project  04.07.2008
Family Name and first name of a contact person  Shashkin Vladimir I.
Position in Organization  Head of Department
Title  Ph.D.
Department/Unit, Chair  Department of Technology of nanostructures and devices (№140)
Address  RU, -, 603950 Nizhny Novgorod GSP-105
WWW address (URL)   http://www.ipm.sci-nnov.ru
E-mail address  
Telephone  +7-831-4385536
Telefax  +7-831-4385553
The countries of partners under the project  All
Types of the project
  • Collaborative project (CP)
 
ICT for Independent Living and Inclusion

ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration
ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems
ICT-2007.3.5: Photonic components and subsystems
ICT-2007.3.6: Micro/nanosystems
ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems
ICT-2007.8.0: FET Open scheme
The brief description of the project  -
Expected results  -
Keywords  MOVPE III-V Hetero-structures Diagnostics Hybrids
Published works  
    M.N. Drozdov, V.M. Danil’tsev, L.D. Moldavskaya, V.I. Shashkin “Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots”
  • Technical Physics Letters, V.34, no.1, p. 1-3 (2008)
  • L.D. Moldavskaya, N.V. Vostokov, D.M. Gaponova, V.M. Danil’tsev, M.N. Drozdov, Yu.N. Drozdov, V.I. Shashkin “The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors” Semiconductors+, V.42, no.1, с. 99-103 (2008)
  • M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, L. D. Moldavskaya, A. V. Murel’, V. I. Shashkin
  • “Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer“ Semiconductors+, V.42, no.3, p. 298-304 (2008)
  • V.I. Shashkin, A.V. Murel “Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier” Physics of the Solid State, V.50, no.3, p. 538-542 (2008)
  • V.I. Shashkin, A.V. Murel “Diagnostics of low-barrier Schottky diodes with near-surface δ-doping” Semiconductors+, V.42, no.4, p. 490-492 (2008)
  • N. V. Alkeev, S. V. Averin, A. A. Dorofeev and V. I. Shashkin “A method for measuring the shot noise in Schottky diodes with reduced barrier height” Journal of Communications Technology and Electronics, Vol. 53, No. 2 (2008) 233-237
  • N.V. Vostokov, V.I. Shashkin “Admittance and non-linear capacity of multilayer metal-semiconductor structure” Semiconductors+, V.42, no.7, p.799-803 /Russian version/ (2008)
  • P.V. Volkov, A.V. Goryunov, V.M. Danil’tsev, A.Yu. Luk’aynov, D.A. Pryakhin, A.D. Tertyshnik, O.I. Khrykin, V.I. Shashkin “Optical monitoring of parameters of technological processes during metalorganic vapor phase epitaxy” Journal of Surface investigation, №8, p.1-6 /Russian version/ (2008)
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor“ Technical Physics, Vol. 53, No. 5 (2008) 629-632
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Effect of cyclic annealing on the static and high-frequency characteristics of YBCO-film-based resonant structures” Technical Physics Letters, Vol. 34, No. 5 (2008) 384-386
  • G. L. Pakhomov “Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices” Microelectronics Journal, V. 38, In Press, Corrected Proof, Available online 22 May 2008
  • G. L. Pakhomov, E. S. Leonov, A. Yu. Klimov “Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures” Microelectronics Journal, Volume 38, Iss. 6-7 (2007) 682-685
  • G. L. Pakhomov, D. A. Kosterin, L. G. Pakhom, T.-F. Guo “Doping of phthalocyanine films: structural reorganization vs. acceptor effect” Journal of Materials Science: Materials in Electronics, Vol. 19, No. 6 (2008) 500-504
Date of last change of the project  04.07.2008
Family Name and first name of a contact person  Shashkin Vladimir I.
Position in Organization  Head of Department
Title  Ph.D.
Department/Unit, Chair  Department of Technology of nanostructures and devices (№140)
Address  RU, -, 603950 Nizhny Novgorod GSP-105
WWW address (URL)   http://www.ipm.sci-nnov.ru
E-mail address  
Telephone  +7-831-4385536
Telefax  +7-831-4385553
The countries of partners under the project  All
Types of the project
  • Collaborative project (CP)
 
Future and Emerging Technologies

ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration
ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems
ICT-2007.3.5: Photonic components and subsystems
ICT-2007.3.6: Micro/nanosystems
ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems
ICT-2007.8.0: FET Open scheme
The brief description of the project  -
Expected results  -
Keywords  MOVPE III-V Hetero-structures Diagnostics Hybrids
Published works  
    M.N. Drozdov, V.M. Danil’tsev, L.D. Moldavskaya, V.I. Shashkin “Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots”
  • Technical Physics Letters, V.34, no.1, p. 1-3 (2008)
  • L.D. Moldavskaya, N.V. Vostokov, D.M. Gaponova, V.M. Danil’tsev, M.N. Drozdov, Yu.N. Drozdov, V.I. Shashkin “The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors” Semiconductors+, V.42, no.1, с. 99-103 (2008)
  • M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, L. D. Moldavskaya, A. V. Murel’, V. I. Shashkin
  • “Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer“ Semiconductors+, V.42, no.3, p. 298-304 (2008)
  • V.I. Shashkin, A.V. Murel “Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier” Physics of the Solid State, V.50, no.3, p. 538-542 (2008)
  • V.I. Shashkin, A.V. Murel “Diagnostics of low-barrier Schottky diodes with near-surface δ-doping” Semiconductors+, V.42, no.4, p. 490-492 (2008)
  • N. V. Alkeev, S. V. Averin, A. A. Dorofeev and V. I. Shashkin “A method for measuring the shot noise in Schottky diodes with reduced barrier height” Journal of Communications Technology and Electronics, Vol. 53, No. 2 (2008) 233-237
  • N.V. Vostokov, V.I. Shashkin “Admittance and non-linear capacity of multilayer metal-semiconductor structure” Semiconductors+, V.42, no.7, p.799-803 /Russian version/ (2008)
  • P.V. Volkov, A.V. Goryunov, V.M. Danil’tsev, A.Yu. Luk’aynov, D.A. Pryakhin, A.D. Tertyshnik, O.I. Khrykin, V.I. Shashkin “Optical monitoring of parameters of technological processes during metalorganic vapor phase epitaxy” Journal of Surface investigation, №8, p.1-6 /Russian version/ (2008)
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor“ Technical Physics, Vol. 53, No. 5 (2008) 629-632
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Effect of cyclic annealing on the static and high-frequency characteristics of YBCO-film-based resonant structures” Technical Physics Letters, Vol. 34, No. 5 (2008) 384-386
  • G. L. Pakhomov “Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices” Microelectronics Journal, V. 38, In Press, Corrected Proof, Available online 22 May 2008
  • G. L. Pakhomov, E. S. Leonov, A. Yu. Klimov “Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures” Microelectronics Journal, Volume 38, Iss. 6-7 (2007) 682-685
  • G. L. Pakhomov, D. A. Kosterin, L. G. Pakhom, T.-F. Guo “Doping of phthalocyanine films: structural reorganization vs. acceptor effect” Journal of Materials Science: Materials in Electronics, Vol. 19, No. 6 (2008) 500-504
Date of last change of the project  04.07.2008
Family Name and first name of a contact person  Shashkin Vladimir I.
Position in Organization  Head of Department
Title  Ph.D.
Department/Unit, Chair  Department of Technology of nanostructures and devices (№140)
Address  RU, -, 603950 Nizhny Novgorod GSP-105
WWW address (URL)   http://www.ipm.sci-nnov.ru
E-mail address  
Telephone  +7-831-4385536
Telefax  +7-831-4385553
The countries of partners under the project  All
Types of the project
  • Collaborative project (CP)
 
Horizontal support actions

ICT-2007.3.1: Next-Generation Nanoelectronics Components and Electronics Integration
ICT-2007.3.2: Organic and large-area electronics, visualisation and display systems
ICT-2007.3.5: Photonic components and subsystems
ICT-2007.3.6: Micro/nanosystems
ICT-2007.8.1: FET proactive 1: Nano-scale ICT devices and systems
ICT-2007.8.0: FET Open scheme
The brief description of the project  -
Expected results  -
Keywords  MOVPE III-V Hetero-structures Diagnostics Hybrids
Published works  
    M.N. Drozdov, V.M. Danil’tsev, L.D. Moldavskaya, V.I. Shashkin “Room-temperature photoconductivity in the 1–2.6 µm range in InAs/GaAs heterostructures with quantum dots”
  • Technical Physics Letters, V.34, no.1, p. 1-3 (2008)
  • L.D. Moldavskaya, N.V. Vostokov, D.M. Gaponova, V.M. Danil’tsev, M.N. Drozdov, Yu.N. Drozdov, V.I. Shashkin “The sandwich InGaAs/GaAs quantum dot structure for IR photoelectric detectors” Semiconductors+, V.42, no.1, с. 99-103 (2008)
  • M. N. Drozdov, N. V. Vostokov, V. M. Danil’tsev, Yu. N. Drozdov, L. D. Moldavskaya, A. V. Murel’, V. I. Shashkin
  • “Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer“ Semiconductors+, V.42, no.3, p. 298-304 (2008)
  • V.I. Shashkin, A.V. Murel “Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier” Physics of the Solid State, V.50, no.3, p. 538-542 (2008)
  • V.I. Shashkin, A.V. Murel “Diagnostics of low-barrier Schottky diodes with near-surface δ-doping” Semiconductors+, V.42, no.4, p. 490-492 (2008)
  • N. V. Alkeev, S. V. Averin, A. A. Dorofeev and V. I. Shashkin “A method for measuring the shot noise in Schottky diodes with reduced barrier height” Journal of Communications Technology and Electronics, Vol. 53, No. 2 (2008) 233-237
  • N.V. Vostokov, V.I. Shashkin “Admittance and non-linear capacity of multilayer metal-semiconductor structure” Semiconductors+, V.42, no.7, p.799-803 /Russian version/ (2008)
  • P.V. Volkov, A.V. Goryunov, V.M. Danil’tsev, A.Yu. Luk’aynov, D.A. Pryakhin, A.D. Tertyshnik, O.I. Khrykin, V.I. Shashkin “Optical monitoring of parameters of technological processes during metalorganic vapor phase epitaxy” Journal of Surface investigation, №8, p.1-6 /Russian version/ (2008)
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Q factor of megahertz LC circuits based on thin films of YBaCuO high-temperature superconductor“ Technical Physics, Vol. 53, No. 5 (2008) 629-632
  • D.V. Masterov, S.A. Pavlov, A.E. Parafin “Effect of cyclic annealing on the static and high-frequency characteristics of YBCO-film-based resonant structures” Technical Physics Letters, Vol. 34, No. 5 (2008) 384-386
  • G. L. Pakhomov “Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices” Microelectronics Journal, V. 38, In Press, Corrected Proof, Available online 22 May 2008
  • G. L. Pakhomov, E. S. Leonov, A. Yu. Klimov “Rectification and NIR photoresponse in p-Si/phthalocyanine/metal heterostructures” Microelectronics Journal, Volume 38, Iss. 6-7 (2007) 682-685
  • G. L. Pakhomov, D. A. Kosterin, L. G. Pakhom, T.-F. Guo “Doping of phthalocyanine films: structural reorganization vs. acceptor effect” Journal of Materials Science: Materials in Electronics, Vol. 19, No. 6 (2008) 500-504
Date of last change of the project  04.07.2008
Family Name and first name of a contact person  Shashkin Vladimir I.
Position in Organization  Head of Department
Title  Ph.D.
Department/Unit, Chair  Department of Technology of nanostructures and devices (№140)
Address  RU, -, 603950 Nizhny Novgorod GSP-105
WWW address (URL)   http://www.ipm.sci-nnov.ru
E-mail address  
Telephone  +7-831-4385536
Telefax  +7-831-4385553
The countries of partners under the project  All
Types of the project
  • Collaborative project (CP)
 
The basic scientific directions of the organization within the limits of thematic priorities
Participation in FP5/6 or INTRAS or others. The submitted and supported projects